Semiconductor device

ABSTRACT

A semiconductor device includes a semiconductor substrate, a capacitor structure, a first contact plug, and a spacer. The capacitor structure is over the semiconductor substrate. The capacitor structure includes a bottom electrode, a capacitor dielectric, and a top electrode. The bottom electrode is over the semiconductor substrate. The capacitor dielectric is over a first portion of the bottom electrode. The top electrode is over the capacitor dielectric. The first contact plug is over and electrically connected to a second portion of the bottom electrode. The spacer is adjacent at least a sidewall of the second portion of the bottom electrode.

PRIORITY CLAIM AND CROSS-REFERENCE

This application is a divisional application of U.S. patent applicationSer. No. 16/132,592, filed Sep. 17, 2018, now U.S. Pat. No. 10,707,295,issued Jul. 7, 2020, the entirety of which is incorporated by referenceherein in their entireties.

BACKGROUND

Advances in technology have resulted in an increasing demand forsystem-on-chip products where both analog and digital signal processingare desirable. Increasingly it is advantageous for both the analogcircuitry and digital circuitry to be in close proximity.

Many systems rely on precise reproducibility in the electronicproperties of circuit component structures, such asmetal-insulator-metal (MIM) capacitors structures, to achieve theelectrical matching of the various circuitry components. Electronicmismatching of circuitry components results in degraded signalprocessing quality and is adversely affected by deviations in criticaldimensions between components. Critical dimension deviation is typicallyexacerbated by the increased number of processing steps required forproducing a component, such as a MIM capacitor in a BEOL process. Thus,an improved MIM capacitor structure and manufacturing process achievingreduced cost and improved performance of both MIM capacitors andtransistors is desirable.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1A-1K are cross-sectional views of a semiconductor device atvarious intermediate stages of manufacture according to some embodimentsof the present disclosure.

FIGS. 2A and 2B are schematic top views of a capacitor structure ofsemiconductor devices according to some embodiments of the presentdisclosure.

FIG. 3 is a cross-sectional view of a semiconductor device according tosome embodiments of the present disclosure.

FIG. 4 is a cross-sectional view of a semiconductor device according tosome embodiments of the present disclosure.

FIG. 5 is a cross-sectional view of a semiconductor device according tosome embodiments of the present disclosure.

FIG. 6 is a cross-sectional view of a semiconductor device according tosome embodiments of the present disclosure.

FIG. 7 is a cross-sectional view of a semiconductor device according tosome embodiments of the present disclosure.

FIG. 8 is a cross-sectional view of a semiconductor device according tosome embodiments of the present disclosure.

FIG. 9 is a cross-sectional view of a semiconductor device according tosome embodiments of the present disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

While the embedded metal-insulator-metal (MIM) capacitor structure andmethod for forming the same according to the invention is described withreference to an exemplary integrated circuit including an adjacentcomplementary Metal-Oxide-semiconductor (CMOS) transistor (e.g., MOSFET)device (e.g., on the same chip), It will be appreciated by those skilledin the art that the method of the invention may be used in the formationof other devices including adjacent capacitors (charge storing devices)and transistors such as analog radio frequency (RF) circuitry anddynamic random access memory (DRAM) devices, where an MIM capacitorstructure and transistor gate structure are advantageously formed inparallel.

FIGS. 1A-1K are cross-sectional views of a semiconductor device atvarious intermediate stages of manufacturing a semiconductor deviceaccording to some embodiments of the present disclosure. Theillustration is merely exemplary and is not intended to be limitingbeyond what is specifically recited in the claims that follow. It isunderstood that additional operations may be provided before, during,and after the operations shown by FIGS. 1A-1K, and some of theoperations described below can be replaced or eliminated for additionalembodiments of the method. The order of the operations/processes may beinterchangeable.

Referring to FIG. 1A, a semiconductor substrate 110 is illustrated. Thesemiconductor substrate 110 has a region PR where passive devices (e.g.,capacitors) are to be formed and a logic region LR where logic circuitsare to be formed. In some embodiments, the substrate 110 may be asemiconductor substrate, such as a bulk semiconductor, asemiconductor-on-insulator (SOI) substrate, or the like. The substrate110 may be a chip portion of a semiconductor processing wafer, such as asilicon wafer. In some embodiments, an SOI substrate comprises a layerof a semiconductor material formed on an insulator layer. The insulatorlayer may be, for example, a buried oxide (BOX) layer, a silicon oxidelayer, or the like. The insulator layer is provided on a substrate, asilicon or glass substrate. Other substrates, such as a multi-layered orgradient substrate may also be used. In some embodiments, thesemiconductor material of the substrate 110 may include silicon;germanium; a compound semiconductor including silicon carbide, galliumarsenic, gallium phosphide, indium phosphide, indium arsenide, and/orindium antimonide; an alloy semiconductor including SiGe, GaAsP, AlInAs,AlGaAs, GaInAs, GaInP, and/or GaInAsP; or combinations thereof.

In some embodiments, the substrate 110 is etched to form at least onetrench T. A portion of the substrate 110 between neighboring trenches Tcan be referred to as an active region or an oxide defined region OD.Trenches T may be trench strips that are substantially parallel to eachother. Similarly, the oxide defined regions OD are substantiallyparallel to each other.

Isolation dielectrics 120 are formed in the trenches T respectively, soas to separate the oxide defined regions OD from each other. In someembodiments, the isolation dielectric 120 is made of silicon oxide,silicon nitride, silicon oxynitride, fluoride-doped silicate glass(FSG), or other low-K dielectric materials. In some embodiments, theisolation dielectric 120 can have a multi-layer structure, for example,a thermal oxide liner layer with silicon nitride formed over the liner.The isolation dielectrics 120 may be formed by forming a dielectriclayer covering the substrate 110 and filling the trenches T, andremoving a portion of the dielectric layer outside the trenches T. It isunderstood that the processes described above are some examples of howshallow trench isolation (STI) structures are formed.

Referring to FIG. 1B, a capacitor bottom electrode 130 is formed overthe region PR of the semiconductor substrate 110. The capacitor bottomelectrode 130 may include metals for reducing electrical resistance fora passive device (e.g., capacitors) and high speed applications. Forexample, the capacitor bottom electrode 130 may be any metal containingconductor including W, WN, Ti, TiN, Mo, TaN, Cu, CuAl, and combinationsthereof. The thickness of the capacitor bottom electrode 130 may be in arange of about 20 angstroms to about 150 angstroms for reducingelectrical resistance and withstanding the subsequent etching process.In some embodiments, the formation of the capacitor bottom electrode 130may include depositing an electrode layer over a top surface of thesubstrate 110 and removing a portion of the electrode layer, and theremaining portion of the electrode layer forms the capacitor bottomelectrode 130. The formation of the electrode layer may include PVD,CVD, electrodeposition, or similar, as is appropriate for the materialbeing deposited. Removing the portion of the electrode layer may includeforming a resist etching mask pattern and subsequently performing anetching process to pattern the electrode layer. The etching process maybe a dry and/or wet etching process and may be optionally anisotropic.

Referring to FIG. 1C, a dielectric layer stack DL, an electrode layer160, and a dummy electrode layer 170 are formed over the structure ofFIG. 1B in a sequence. The dielectric layer DL may include one or moredialectic layers. For example, the dielectric layer DL includes an oxidedielectric layer 140 and a high-k dielectric layer 150 over the oxidedielectric layer 140. The oxide dielectric layer 140 is conformallydeposited over the capacitor bottom electrode 130 and the top surface ofthe substrate 110. The oxide dielectric layer 140 include oxide, such assilicon oxide. The oxide dielectric layer 140 may be formed by suitabledeposition processes, such as chemical vapor deposition (CVD), physicalvapor deposition (PVD), atomic layer deposition (ALD), plasma enhancedCVD (PECVD) or other suitable techniques.

The high-k dielectric layer 150 is then conformally deposited over theoxide dielectric layer 140. The high-k dielectric layer 150 has adielectric constant greater than about that of the oxide dielectriclayer 140. For example, the dielectric constant of the high-k dielectriclayer 150 is greater than about 10. The high-k dielectric layer 150, forexample, may include, but is not limited to high-K dielectrics such astantalum oxide (e.g., TaO₂), tantalum pentaoxide (e.g., Ta₂O₅), hafniumoxide (e.g., HfO₂), aluminum oxide (e.g., Al₂O₃), indium oxide (e.g.,InO₂), lanthanum oxide (e.g., LaO₂), zirconium oxide (e.g., ZrO₂),yttrium oxide (e.g., Y₂O₃), and combinations thereof. It will beappreciated by those skilled in the art that the thickness of the high-kdielectric layer 150 will depend in part on design constraints of a gatedielectric structure as well as a desired capacitance of an MIMstructure, e.g., 5 angstroms to 1000 angstroms. The high-k dielectriclayer 150 may be formed by suitable deposition processes, such aschemical vapor deposition (CVD), physical vapor deposition (PVD), atomiclayer deposition (ALD), plasma enhanced CVD (PECVD) or other suitabletechniques.

The electrode layer 160 is conformally deposited over the high-kdielectric layer 150. The electrode layer 160 is used to protect thehigh-k dielectric layer 150 in a subsequent etching process (e.g. anetching process during the removal of the dummy electrode layer 170). Insome embodiments, a conductive gate (e.g., metal gate or polysilicongate) will be formed over an element patterned from the electrode layer160 later, such that the thickness of the electrode layer 160 may bedesigned regardless of the electrical resistance. For example, thethickness of the electrode layer 160 may be designed to be thinner thanthat of the capacitor bottom electrode 130. In some embodiments, thethickness of the electrode layer 160 may be in a range of about 10angstroms to about 100 angstroms for protecting the high-k dielectriclayer 150 and reducing the overall device size.

In some embodiments, the electrode layer 160 may include metals forproviding work function suitable for a logic device (e.g., atransistor). For example, the electrode layer 160 may include a workfunction conductive layer. The work function conductive layer mayinclude one or more n-type work function metals (N-metal) for forming ann-type transistor. The n-type work function metals may exemplarilyinclude, but are not limited to, titanium aluminide (TiAl), titaniumaluminium nitride (TiAlN), tantalum nitride (TaN), carbo-nitridetantalum (TaCN), hafnium (Hf), zirconium (Zr), titanium (Ti), tantalum(Ta), aluminum (Al), metal carbides (e.g., hafnium carbide (HfC),zirconium carbide (ZrC), titanium carbide (TiC), aluminum carbide(AlC)), aluminides, and/or other suitable materials. In alternativeembodiments, the work function conductive layer may include one or morep-type work function metals (P-metal) for forming a p-type transistor onthe substrate 110. The p-type work function metals may exemplarilyinclude, but are not limited to, titanium nitride (TiN), tungstennitride (WN), tungsten (W), ruthenium (Ru), palladium (Pd), platinum(Pt), cobalt (Co), nickel (Ni), conductive metal oxides, and/or othersuitable materials. The formation of the electrode layer 160 may includePVD, CVD, electrodeposition, or similar, as is appropriate for thematerial being deposited. In some embodiments, the material of theelectrode layer 160 is the same as that of the capacitor bottomelectrode 130. For example, the capacitor bottom electrode and theelectrode layers 160 are both made of TiN.

The dummy electrode layer 170 is then formed over the electrode layer160. The dummy electrode layer 170 may include polycrystalline-silicon(poly-Si), poly-crystalline silicon-germanium (poly-SiGe), metallicnitrides, metallic silicides, metallic oxides, or metals. In someembodiments, the dummy electrode layer 170 includes a metal-containingmaterial such as TiN, TaN, TaC, Co, Ru, Al, combinations thereof, ormulti-layers thereof. Further, the dummy electrode layer 170 may bedoped poly-silicon with uniform or non-uniform doping. The dummyelectrode layer 170 may be deposited by CVD, physical vapor deposition(PVD), sputter deposition, or other techniques suitable for depositingconductive materials.

Next, referring to FIG. 1D, the dielectric layer 140, the high-kdielectric layer 150, the electrode layer 160, and the dummy electrodelayer 170 (referring to FIG. 1C) are patterned, and a capacitor stack S1and a gate stack S2 are formed. For example, a patterned mask is formedover a portion of the dummy electrode layer 170 (referring to FIG. 1C).The patterned mask may be a hard mask for protecting underlying portionsof the layers 140-170 (referring to FIG. 1C) against subsequent etchingprocess. The patterned mask may be formed by a series of operationsincluding deposition, photolithography patterning, and etchingprocesses. The photolithography patterning processes may includephotoresist coating (e.g., spin-on coating), soft baking, mask aligning,exposure, post-exposure baking, developing the photoresist, rinsing,drying (e.g., hard baking), and/or other applicable processes. Theetching processes may include dry etching, wet etching, and/or otheretching methods (e.g., reactive ion etching).

An etching process using the patterned mask is performed to the layers140-170 (referring to FIG. 1C). Through the etching process, thedielectric layer DL is patterned into a capacitor dielectric DL1 and agate dielectric DL2. For example, the dielectric layer 140 is patternedinto a first capacitor dielectric 142 and a first gate dielectric 144.The high-k dielectric layer 150 is patterned into a second capacitordielectric 152 and a second gate dielectric 154. The capacitordielectric DL1 includes the first capacitor dielectric 142 and thesecond capacitor dielectric 152. The gate dielectric DL2 includes thefirst gate dielectric 144 and the second gate dielectric 154. Theelectrode layer 160 is patterned into a capacitor top electrode 162 anda work function layer 164. The dummy electrode layer 170 is patternedinto a dummy capacitor electrode 172 and the dummy gate electrode 174.In some embodiments, the dummy capacitor electrode 172 and the dummygate electrode 174 will be replaced with a replacement gate structureusing a “gate-last” or replacement-gate process later.

Through the configuration, in the present embodiments, the capacitorstack S1 is formed over the isolation dielectric 120, and the capacitorstack S1 includes the capacitor bottom electrode 130, a capacitordielectric DL1, the capacitor top electrode 162, and the dummy capacitorelectrode 172. The gate stack S2 is formed over the oxide defined regionOD, and the gate stack S2 includes the gate dielectric layer DL2, thework function layer 164, and the dummy gate electrode 174.

Referring to FIG. 1E, spacers 182 are formed on opposite sidewalls ofthe capacitor stack S1, and spacers 184 are formed on opposite sidewallsof the gate stack S2. In some embodiments, the spacers 182 and 184 mayinclude silicon oxide, silicon nitride, silicon oxynitride, siliconcarbide, silicon carbonitride, silicon oxycarbonitride, siliconoxycarbide, porous dielectric materials, hydrogen doped siliconoxycarbide (SiOC:H), low-k dielectric materials or other suitabledielectric material. The spacers 182 and 184 may include a single layeror multilayer structure made of different dielectric materials. Themethod of forming the spacers 182 and 184 includes blanket forming adielectric layer on the structure shown in FIG. 1D using, for example,CVD, PVD or ALD, and then performing an etching process such asanisotropic etching to remove horizontal portions of the dielectriclayer. The remaining portions of the dielectric layer on sidewalls ofthe stacks S1 and S2 can serve as the spacers 182 and 184. In someembodiments, during the formation of the spacers 182 and 184, thecapacitor bottom electrode 130 is covered by the capacitor dielectricDL1, the capacitor top electrode 162, and the dummy capacitor electrode172, and prevented from being etched by the etching process.

In some embodiments, source and drain regions SD are formed in the oxidedefined regions OD after the formation of the spacers 182 and 184. Insome embodiments, the source and drain regions SD are formed byperforming an ion implantation process to the oxide defined regions OD.To be specific, dopants (e.g., n-type dopants or p-type dopants) areimplanted into the substrate 110, thereby forming the source and drainregions SD. For example, the p-type dopant includes boron (B), gallium(Ga), and indium (In). In some examples, the n-type dopant includesphosphorus (P) and arsenic (As). The source and drain regions SD mayhave an impurity concentration high enough to be conductive. After theion implantation process, an anneal process may be performed to activatethe dopant.

The spacers 184 may be used to offset the source/drain regions SD, andthe spacers 182 and 184 protect the stacks S1 and S2 from being damagedby the ion implantation process. The spacers 184 may further be used fordesigning or modifying the source/drain region profile.

Referring to FIG. 1F, an interlayer dielectric (ILD) layer 190 is formedon the structure of FIG. 1E. In some embodiments, the ILD layer 190 mayinclude oxides. For example, the ILD layer 190 may include siliconnitride, silicon oxynitride, tetraethoxysilane (TEOS), phosphosilicateglass (PSG), borophosphosilicate glass (BPSG), undoped silicon oxide(USG), low-k dielectric material, and/or other suitable dielectricmaterials. Examples of low-k dielectric materials include, but are notlimited to, fluorinated silica glass (FSG), carbon doped silicon oxide,amorphous fluorinated carbon, parylene, bis-benzocyclobutenes (BCB), orpolyimide. In some embodiments, the ILD layer 190 may be formed of alow-k dielectric material having a k value less than about 3.9. The kvalue of the ILD layer 190 may even be lower than about 2.8. The ILDlayer 190 may be formed using, for example, CVD, ALD, spin-on-glass(SOG) or other suitable techniques. In some embodiments, a gap fillapproach is implemented herein by repeating deposition and etch cyclesfor complete gap fill. Afterwards, a CMP process may be optionallyperformed to remove excessive material of the ILD layer 190 to exposethe stacks S1 and S2. The CMP process may planarize a top surface of theILD layer 190 with top surfaces of the stacks S1 and S2, and the spacers182 and 184 in some embodiments.

In some embodiments, prior to the formation of the ILD layer 190, acontact etch stop layer (CESL) is blanket formed on the structure shownin FIG. 1E. The CESL includes a material different from that of the ILDlayer 190. For example, the CESL includes silicon nitride, siliconoxynitride or other suitable materials. The CESL can be formed using,for example, plasma enhanced CVD, low pressure CVD, ALD or othersuitable techniques.

FIG. 1G illustrate removal of a portion of the dummy capacitor electrode172 and removal of the dummy gate electrode 174 (referring to FIG. 1F).In some embodiments, the removals may include forming a patterned maskover the structure of FIG. 1F, and performing an etching process, suchas a dry etching process, a wet etching process, or the combinationthereof. The dry etching process includes using an etching gas such asCF₄, Ar, NF₃, Cl₂, He, HBr, O₂, N₂, CH₃F, CH₄, CH₂F₂, or combinationsthereof. In some embodiments, the capacitor top electrode 162 and thework function layer 164 have a higher resistance to the etching processthan that of the dielectric 152/154 and that of the dummy capacitorelectrode 172/174 (referring FIG. 1F), such that the capacitor topelectrode 162 and the work function layer 164 may serve as etch stoplayers herein, thereby preventing the dielectrics 152 and 154 from beingetched. In some embodiments, the spacers 184 may also have a higherresistance to the etching process than that of the dummy capacitorelectrode 172/174 (referring FIG. 1F), thereby protecting the ILD layer190 from being laterally etched.

After the removal, a trench CT1 is formed with the remaining portions ofthe dummy capacitor electrode 172 (referred to as the dummy capacitorelectrode 172′ herein) as their sidewalls, in which the capacitor topelectrode 162 remains in the bottom of the trench CT1. Also, a trench GTis formed with the spacers 184 as their sidewalls, in which the workfunction layer 164 remains in the bottom of the trench GT.

Referring to FIG. 1H, a capacitor top electrode 212 and a gate electrode214 are formed in the trenches CT1 and GT respectively. In someembodiments, the formation of the electrodes 212 and 214 includesoverfilling the trenches CT1 and GT with a gate electrode layer, andremoving an excess portion of the gate electrode layer out of thetrenches CT1 and GT, thereby forming the electrodes 212 and 214. Thegate electrode layer may include a conductive layer. The conductivelayer may exemplarily include metals, such as tungsten, aluminum,copper, nickel, cobalt, titanium, tantalum, titanium nitride, tantalumnitride, nickel silicide, cobalt silicide, TaC, TaSiN, TaCN, TiAl,TiAlN, or other suitable materials. In some embodiments, the metal layeris formed by ALD process. The removal may include a planarizationprocess, such as a chemical mechanical polish (CMP) process.

In some embodiments, the gate electrode layer may further include a workfunction conductive layer blanketly formed on the structure shown inFIG. 1G, and then, the conductive layer is formed over the work functionconductive layer. For example, each of the capacitor top electrode 212and the gate electrode 214 may include a U-shaped work functionconductive layer and a conductive layer filling an opening of theU-shaped work function conductive layer. The work function conductivelayer includes work function metals to provide a suitable work functionfor the conductive layer. In some embodiments, the work functionconductive layer may include one or more n-type work function metals(N-metal) for forming an n-type transistor on the substrate 110. Then-type work function metals may exemplarily include, but are not limitedto, titanium aluminide (TiAl), titanium aluminium nitride (TiAlN),carbo-nitride tantalum (TaCN), hafnium (Hf), zirconium (Zr), titanium(Ti), tantalum (Ta), aluminum (Al), metal carbides (e.g., hafniumcarbide (HfC), zirconium carbide (ZrC), titanium carbide (TiC), aluminumcarbide (AlC)), aluminides, and/or other suitable materials. Inalternative embodiments, the work function conductive layer 310 mayinclude one or more p-type work function metals (P-metal) for forming ap-type transistor on the substrate 110. The p-type work function metalsmay exemplarily include, but are not limited to, titanium nitride (TiN),tungsten nitride (WN), tungsten (W), ruthenium (Ru), palladium (Pd),platinum (Pt), cobalt (Co), nickel (Ni), conductive metal oxides, and/orother suitable materials. The material of the work function conductivelayer may be the same as or different from that of the capacitor topelectrode 162 and the work function layer 164. In some embodiments, thework function conductive layer is formed by ALD process.

FIG. 1I illustrates removal of the dummy capacitor electrode 172′, aportion of the capacitor top electrode 162, and a portion of thecapacitor dielectric DL1 under the dummy capacitor electrode 172′(referring to FIG. 1H). In some embodiments, the removal may includeforming a patterned mask over the structure of FIG. 1H, and performingan etching process, e.g., a dry etching process, a wet etching process,or the combination thereof. The dry etching process includes using anetching gas such as CF₄, Ar, NF₃, Cl₂, He, HBr, O₂, N₂, CH₃F, CH₄,CH₂F₂, or combinations thereof. In some embodiments, plural etchingprocesses are used. The etching process(es) may be stopped when reachingthe capacitor bottom electrode 130. In some embodiments, the capacitorbottom electrode 130 is thick enough to withstand the etchingprocess(es), while the electrode 162/162′ is thin enough to beingpartially removed during the etching process(es). In some embodiments,the capacitor bottom electrode 130 has a higher etch resistance to thatto the etching process(es) than that of the dielectrics 152, 142, andthe dummy capacitor electrode 172′ (referring FIG. 1H), such that thecapacitor bottom electrode 130 may remain after the etching process(es).

After the removal, the remaining portions of the elements 142-162(referring to FIG. 1H) may be referred to as the elements 142′-162′respectively, and the remaining portion of the capacitor dielectric DL1may be referred to as the capacitor dielectric DL1′ hereinafter. Theremoval forms openings or trenches CT2 between the spacers 182 and acombination of the capacitor top electrode 212 and the elements142′-162′, while the capacitor bottom electrode 130 remains in thebottom of the openings or trenches CT2. The openings or trenches CT2exposes portions 134 of the capacitor bottom electrode 130, and aportion 132 of the capacitor bottom electrode 130 remains covered by thetop electrode 212.

Referring to FIG. 1J, an ILD layer 220 is formed on the structure ofFIG. 1I. The ILD layer 220 may overfill the trenches CT2. To bespecific, ILD layer 220 has a first portion 222 and a second portion224. The first portion 222 of the ILD layer 220 fills the trenches CT2between the spacers 182 and a combination of the capacitor top electrode212 and the elements 142′-162′, and the second portion 224 of the ILDlayer 220 is over the capacitor stack S1 and S2.

In some embodiments, the ILD layer 220 may include oxides. For example,the ILD layer 220 may include silicon oxide, silicon nitride, siliconoxynitride, tetraethoxysilane (TEOS), phosphosilicate glass (PSG),borophosphosilicate glass (BPSG), undoped silicon oxide (USG), low-kdielectric material, and/or other suitable dielectric materials.Examples of low-k dielectric materials include, but are not limited to,fluorinated silica glass (FSG), carbon doped silicon oxide, amorphousfluorinated carbon, parylene, bis-benzocyclobutenes (BCB), or polyimide.In some embodiments, the ILD layer 220 may be formed of a low-kdielectric material having a k value less than about 3.9. The k value ofthe ILD layer 220 may even be lower than about 2.8. The ILD layer 220may be formed using, for example, CVD, ALD, spin-on-glass (SOG) or othersuitable techniques. In some embodiments, a gap fill approach (e.g.,IPM) is implemented herein by repeating deposition and etch cycles forcomplete gap fill.

Referring to FIG. 1K, contact vias 232, 234, 236, and 238 are formed inthe ILD layer 220. The contact vias 232 is in contact with the capacitortop electrode 212, and the contact vias 234 are in contact with thecapacitor bottom electrode 130. The contact vias 236 is in contact withthe gate electrode 214, and the contact vias 232 are in contact with thesource/drain regions SD.

In some embodiments, the contact vias 232, 234, 236, and 238 may betitanium (Ti), tantalum (Ta), platinum (Pt), ruthenium (Ru), tungsten(W), aluminum (Al), copper (Cu), the like, and/or the combinationthereof. Formation of the contact vias 232, 234, 236, and 238 includes,for example etching contact holes in the ILD layer 220 to respectivelyexpose the capacitor top electrode 212, the capacitor bottom electrode130, the gate electrode 214, and the source/drain regions SD, fillingthe contact holes with metals using a suitable deposition technique, andperforming a planarization process (e.g. CMP) to remove excess metalsoutside the via holes while leaving metals in the contact holes to serveas the contact vias 232, 234, 236, and 238. Through the configurationthe contact vias 234 is between the spacer 182 and a combination of thecapacitor top electrode 212 and the elements 142′-162′.

A MIM capacitor structure MS and a transistor gate structure TS areformed in parallel in the regions PR and the logic region LRrespectively. The MIM capacitor structure MS includes the capacitorbottom electrode 130, the capacitor dielectric DL1, the capacitor topelectrode 162, and the capacitor top electrode 212, in which the contactvias 232 and 234 are respectively connected with the capacitor topelectrode 212 and the capacitor bottom electrode 130. The transistorgate structure TS includes the source/drain regions SD, the gatedielectric layer DL2, the work function layer 164, and the gateelectrode 214, in which the contact vias 236 and 238 are respectivelyconnected with the gate electrode 214 and the source/drain regions SD.

In some embodiments of the present disclosure, the capacitor dielectricDL1 and the gate dielectric layer DL2 are formed before the gatereplacement steps, and therefore the top surfaces of the capacitordielectric DL1 and the gate dielectric layer DL2 remains flat, ratherthan conformal to the trenches, e.g., U-shaped. The capacitor topelectrode 162 and the work function layer 164 have bottom surface incontact with the flat top surfaces of the capacitor dielectric DL1 andthe gate dielectric layer DL2.

In some embodiments of the present disclosure, the capacitor topelectrode 212 of the MIM capacitor structure MS and the gate electrode214 of the transistor gate structure TS are formed using the gate lastapproach. The capacitor dielectric DL1 and the gate dielectric layerDL2, however, are formed before the replacement of the electrodes. Therespective approach is thus sometimes referred to as a gate-lastdielectric-first approach or a gate-last HK-first approach. Inalternative embodiments, a gate-last dielectric-last approach (orgate-last HK-last approach) may be used. The process steps are similarto the steps shown in FIGS. 1A-1K, except that the capacitor dielectricDL1 and the gate dielectric layer DL2 are not formed before theformation of the dummy capacitor electrode 172 and the dummy gateelectrode 174. Rather, the capacitor dielectric DL1 and the gatedielectric layer DL2 are formed after the removal of the dummy capacitorelectrode 172 and the dummy gate electrode 174 (see the step shown inFIG. 1G), and is formed before the formation of the capacitor topelectrode 212 and the gate electrode 214 as shown in FIG. 1H.

FIGS. 2A and 2B are schematic top views of the MIM capacitor structureMS of semiconductor devices according to some embodiments of the presentdisclosure. Referring to FIG. 2A and FIG. 1K, in some embodiments, thecapacitor top electrode 212 and the elements 142′-162′ are separatedfrom the spacers 182 by the first portion 222 of the ILD layer 220. Thecontact vias 232 is in the second portion 224 and connected with thecapacitor top electrode 212, while the contact vias 234 are in the firstportion 222 and connected with the capacitor bottom electrode 130.Referring to FIG. 2B and FIG. 1K, in some embodiments, the capacitor topelectrode 212 and the elements 142′-162′ are connected with at least oneof the spacers 182, and the first portion 222 of the ILD layer 220 isbetween said at least one of the spacers 182 and a combination of thecapacitor top electrode 212 and the elements 142′-162′. For example,herein the capacitor top electrode 212 and the elements 142′-162′connected with both the spacers 182. However, it should not limit thescope of the present embodiments, in some embodiments, the combinationof the capacitor top electrode 212 and the elements 142′-162′ may beconnected with one of the spacers 182 and separated from another of thespacers 182.

FIG. 3 is a cross-sectional view of a semiconductor device according tosome embodiments of the present disclosure. The present embodiments aresimilar to the embodiments of FIG. 1K, and the difference between thepresent embodiments and the embodiments of FIG. 1K is that the trenchCT2 is formed between one of the spacers 182 and a combination of thecapacitor top electrode 212 and the elements 142′-162′, and another ofthe spacers 182 remains on the sidewalls of the capacitor top electrode212 and the elements 142′-162′. For example, in some embodiments, thecapacitor dielectric 142′, the second capacitor dielectric 152′, and thecapacitor top electrode 162′, and the electrode 212 are separated fromone of the spacers 182 in the present embodiments. Other details of thepresent embodiments are similar to those aforementioned, and notrepeated herein.

FIG. 4 is a cross-sectional view of a semiconductor device according tosome embodiments of the present disclosure. The present embodiments aresimilar to the embodiments of FIG. 1K, and the difference between thepresent embodiments and the embodiments of FIG. 1K is that: a dopedregion DR is formed in the semiconductor substrate 110, and thecapacitor stack S1 is formed over the doped region DR. The doped regionDR may be formed by suitable ion implantation process. To be specific,prior to the formation of the capacitor bottom electrode 130, dopants(e.g., n-type dopants or p-type dopants) are implanted into thesubstrate 110, thereby forming the doped region DR. For example, thep-type dopant includes boron (B), gallium (Ga), and indium (In). In someexamples, the n-type dopant includes phosphorus (P) and arsenic (As).The doped region DR may have an impurity concentration high enough to belower an extension resistance, which in turn will make the doped regionDR of the substrate 110 conductive. After the ion implantation process,an anneal process may be performed to activate the dopant.

In the present embodiments, at least a portion of the doped region DRmay be exposed by the capacitor stack S1 and the spacers 182 andconnected with the contact vias 234, which in turn will enable thecontact vias 234 being electrically connected with the capacitor bottomelectrode 130 of the capacitor stack S1 through the doped region DR. Inthe present embodiments, the capacitor top electrode 212, the capacitortop electrode 162, the second capacitor dielectric 152, and thecapacitor dielectric 142 are not etched, such that the spacers 182remains on sidewalls of the capacitor stack S1. In the presentembodiments, the contact vias 234 is in the ILD layers 190 surroundingthe MIM capacitor structure MS and the transistor gate structure TS,rather than in between the capacitor stack S1 and the spacer 182 of theMIM capacitor structure. Other details of the present embodiments aresimilar to those aforementioned, and not repeated herein.

FIG. 5 is a cross-sectional view of a semiconductor device according tosome embodiments of the present disclosure. The present embodiments aresimilar to the embodiments of FIG. 4, and the difference between thepresent embodiments and the embodiments of FIG. 4 is that: in thepresent embodiments, the capacitor stack S1 is over the doped region DRand the isolation dielectric 120. Through the configuration, thecapacitor stack S1 may occupy less active area, e.g., oxide definedregions OD. As aforementioned, the contact vias 234 may be electricallyconnected with the capacitor bottom electrode 130 of the capacitor stackS1 through the doped region DR exposed by the capacitor stack S1. Otherdetails of the present embodiments are similar to those aforementioned,and not repeated herein.

FIG. 6 is a cross-sectional view of a semiconductor device according tosome embodiments of the present disclosure. The present embodiments aresimilar to the embodiments of FIG. 1K, and the difference between thepresent embodiments and the embodiments of FIG. 1K is that: thecapacitor top electrode 212 and the spacers 182 cover a portion 132 ofthe capacitor bottom electrode 130, but expose portions 134 of thecapacitor bottom electrode 130. In the present embodiments, the contactvias 234 is electrically connected with the portions 134 of thecapacitor bottom electrode 130 of the capacitor stack S1. In the presentembodiments, the capacitor top electrode 212, the capacitor topelectrode 162, the second capacitor dielectric 152, and the capacitordielectric 142 are not etched, such that the spacers 182 remains atsidewalls of the capacitor stack S1. In the present embodiments, thecontact vias 234 is in the ILD layer 190 and the second portion 224 ofthe ILD layer 220, rather than in the first portion 222 of the ILD layer220 (referring to FIG. 1K) between the capacitor stack S1 and the spacer182. Other details of the present embodiments are similar to thoseaforementioned, and not repeated herein.

FIG. 7 is a cross-sectional view of a semiconductor device according tosome embodiments of the present disclosure. The present embodiments aresimilar to the embodiments of FIG. 1K, and the difference between thepresent embodiments and the embodiments of FIG. 1K is that: in thepresent embodiments, the spacers 182 extends from a top surface of theisolation dielectric 120 to a top surface of the oxide defined regionsOD of the substrate 210. That is, the spacers 182 crosses the isolationdielectric 120 and the oxide defined regions OD. In the presentembodiments, the capacitor bottom electrode 130 remains being separatedfrom the oxide defined regions OD by the spacers 182 and the solationdielectric 120, such that the performance of the MIM capacitor structureMS is kept from being influenced by the oxide defined regions OD. Otherdetails of the present embodiments are similar to those aforementioned,and not repeated herein.

FIG. 8 is a cross-sectional view of a semiconductor device according tosome embodiments of the present disclosure. The present embodiments aresimilar to the embodiments of FIG. 3, and the difference between thepresent embodiments and the embodiments of FIG. 3 is that: the spacers182 extends from a top surface of the isolation dielectric 120 to a topsurface of the oxide defined regions OD of the substrate 210. In thepresent embodiments, the capacitor bottom electrode 130 remains beingseparated from the oxide defined regions OD by the spacers 182 and thesolation dielectric 120, such that the performance of the MIM capacitorstructure MS is kept from being influenced by the oxide defined regionsOD. Other details of the present embodiments are similar to thoseaforementioned, and not repeated herein.

FIG. 9 is a cross-sectional view of a semiconductor device according tosome embodiments of the present disclosure. The present embodiments aresimilar to the embodiments of FIG. 6, and the difference between thepresent embodiments and the embodiments of FIG. 6 is that: one of thespacers 182 covers a sidewall of the first portion 132 of the capacitorbottom electrode 130. For example, said one of the spacers 182 extendsfrom a top surface of the isolation dielectric 120 alongside one of thesidewalls of the capacitor stack S1 to the ILD 220, while another one ofthe spacers 182 extends from a top surface of the second portion 134 ofthe capacitor bottom electrode 130 alongside another of the sidewalls ofthe capacitor stack S1 to the ILD 220. Through the configuration, thefirst portion 132 of the capacitor bottom electrode 130 is preventedfrom being etched during the formation of the spacers 182. Other detailsof the present embodiments are similar to those aforementioned, and notrepeated herein.

Based on the above discussions, it can be seen that the presentdisclosure offers advantages. It is understood, however, that otherembodiments may offer additional advantages, and not all advantages arenecessarily disclosed herein, and that no particular advantage isrequired for all embodiments. One advantage is that a capacitor and atransistor are integrally formed without needing extra productivity,thereby improving production efficiency. Another advantage is that thecapacitor top and bottom electrodes may serve as etch stop layers duringetching processes in the formation of the MIM capacitor structure,thereby benefiting the fabrication process control. Still anotheradvantage is that a capacitor bottom electrode is covered by a capacitortop electrode during formation of spacers, and therefore the capacitorbottom electrode may be prevented from being etched by etching processused for patterning the spacers.

According to some embodiments of the present disclosure, a semiconductordevice includes a semiconductor substrate, a capacitor structure, afirst contact plug, and a spacer. The capacitor structure is over thesemiconductor substrate. The capacitor structure includes a bottomelectrode, a capacitor dielectric, and a top electrode. The bottomelectrode is over the semiconductor substrate. The capacitor dielectricis over a first portion of the bottom electrode. The top electrode isover the capacitor dielectric. The first contact plug is over andelectrically connected to a second portion of the bottom electrode. Thespacer is adjacent at least a sidewall of the second portion of thebottom electrode.

According to some embodiments of the present disclosure, a semiconductordevice includes a semiconductor substrate, a capacitor structure, and atransistor gate structure. The semiconductor substrate has a firstregion and a second region. The capacitor structure includes a bottomelectrode, a capacitor dielectric, and a top electrode. The bottomelectrode is over the first region of the semiconductor substrate. Thecapacitor dielectric is over the bottom electrode. The top electrode isover the capacitor dielectric. The gate dielectric is over the secondregion of the semiconductor substrate. The gate electrode is over thegate dielectric. A top surface of the gate electrode of the transistorgate structure is at a position higher than a top surface of the bottomelectrode of the capacitor structure.

According to some embodiments of the present disclosure, a semiconductordevice includes a semiconductor substrate, an isolation dielectric, anda capacitor structure. The isolation dielectric is in the semiconductorsubstrate. The capacitor structure is over the semiconductor substrate.The capacitor structure includes a bottom electrode, a capacitordielectric, and a top electrode. The bottom electrode is in contact withthe isolation dielectric. The capacitor dielectric is over the bottomelectrode. The top electrode is over the capacitor dielectric.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A semiconductor device, comprising: asemiconductor substrate; a capacitor structure over the semiconductorsubstrate, wherein the capacitor structure comprises: a bottom electrodeover the semiconductor substrate; a capacitor dielectric over a firstportion of the bottom electrode; and a top electrode over the capacitordielectric; a first contact plug over and electrically connected to asecond portion of the bottom electrode; and a spacer adjacent at least asidewall of the second portion of the bottom electrode, wherein a bottomsurface of the spacer is lower than a top surface of the bottomelectrode, the spacer continuously extends from the bottom surface ofthe spacer to a top end of the spacer, and the top end of the spacer ishigher than a top surface of the capacitor dielectric.
 2. Thesemiconductor device of claim 1, wherein the first contact plug isbetween the capacitor dielectric of the capacitor structure and thespacer.
 3. The semiconductor device of claim 1, further comprising: aninterlayer dielectric layer over the second portion of the bottomelectrode, wherein the interlayer dielectric layer is at least betweenthe capacitor dielectric and the spacer, and the first contact plug isin the interlayer dielectric layer.
 4. The semiconductor device of claim3, wherein the interlayer dielectric layer further extends over thecapacitor structure and the spacer.
 5. The semiconductor device of claim1, wherein the top end of the spacer is substantially at a positionlevel with a top surface of the top electrode.
 6. The semiconductordevice of claim 1, further comprising: an isolation dielectric in thesemiconductor substrate, where the bottom electrode is over andcontacting the isolation dielectric.
 7. The semiconductor device ofclaim 1, wherein the second portion of the bottom electrode is free ofcoverage by the capacitor dielectric and the top electrode.
 8. Thesemiconductor device of claim 1, wherein the top end of the spacer ishigher than a bottom end of the first contact plug.
 9. A semiconductordevice, comprising: a semiconductor substrate having a first region anda second region; a capacitor structure comprising: a bottom electrodeover the first region of the semiconductor substrate; a capacitordielectric over the bottom electrode, wherein the capacitor dielectricof the capacitor structure comprises a first capacitor dielectric layerand a second capacitor dielectric layer over the first capacitordielectric layer; and a top electrode over the capacitor dielectric; anda transistor gate structure comprising: a gate dielectric over thesecond region of the semiconductor substrate, wherein the gatedielectric comprises a first gate dielectric layer and a second gatedielectric layer over the first gate dielectric layer, the first gatedielectric layer comprises a material the same as that of the firstcapacitor dielectric layer, and the second gate dielectric layercomprises a material the same as that of the second capacitor dielectriclayer; and a gate electrode over the gate dielectric, wherein a topsurface of the gate electrode of the transistor gate structure is at aposition higher than a top surface of the bottom electrode of thecapacitor structure.
 10. The semiconductor device of claim 9, whereinthe top electrode has a first electrode and a second electrode over thefirst electrode, and the bottom electrode is thicker than the firstelectrode.
 11. The semiconductor device of claim 9, further comprising:a contact plug over and electrically connected to the bottom electrodeof the capacitor structure.
 12. The semiconductor device of claim 9,wherein the capacitor dielectric is covered by the top electrode. 13.The semiconductor device of claim 9, wherein the top surface of the gateelectrode is substantially aligned laterally with a top surface of thetop electrode of the capacitor structure.
 14. The semiconductor deviceof claim 9, wherein the top electrode of the capacitor structure has afirst electrode and a second electrode over the first electrode, thegate electrode of the transistor gate structure has a work functionmetal layer and a gate metal over the work function metal layer, thefirst electrode comprises a material the same as that of the workfunction metal layer, and the second electrode comprises a material thesame as that of the gate metal.
 15. A semiconductor device, comprising:a semiconductor substrate; an isolation dielectric in the semiconductorsubstrate; a capacitor structure over the semiconductor substrate,wherein the capacitor structure comprises: a bottom electrode in contactwith the isolation dielectric; a capacitor dielectric over the bottomelectrode; and a top electrode over the capacitor dielectric, whereinthe top electrode has a first electrode and a second electrode over thefirst electrode; and a transistor gate structure over the semiconductorsubstrate, wherein the transistor gate structure comprises: a gatedielectric; and a gate electrode over the gate dielectric, wherein thegate electrode has a work function metal layer and a gate metal over thework function metal layer, the first electrode comprises a material thesame as that of the work function metal layer, and the second electrodecomprises a material the same as that of the gate metal.
 16. Thesemiconductor device of claim 15, wherein the bottom electrode is freeof contacting the semiconductor substrate.
 17. The semiconductor deviceof claim 15, further comprises: a contact plug over and electricallyconnected to the bottom electrode.
 18. The semiconductor device of claim15, further comprising: a spacer adjacent a sidewall of the bottomelectrode, wherein at least a portion of a sidewall of the capacitordielectric is spaced apart from the spacer.
 19. The semiconductor deviceof claim 18, wherein the spacer is in contact with the isolationdielectric.
 20. The semiconductor device of claim 15, wherein thecapacitor dielectric comprises an oxide dielectric layer and a high-kdielectric layer over the oxide dielectric layer.